Si diode under avalanche breakdown as a light emitting source for VLSI optical interconnect

Author

Kerns, David V. ; Arora, Krishna ; Kurinec, Santosh ; Power, Walter

Author_Institution

Dept. of Electr. Eng., Vanderbilt Univ., Nashville, TN, USA

fYear

1989

fDate

26-28 Mar 1989

Firstpage

677

Lastpage

680

Abstract

Light-emission properties of a reverse-biased silicon diode under avalanche breakdown are investigated for optical interconnections for VLSI systems. Silicon, being an indirect bandgap semiconductor, is a poor material for light emission from forward biased diodes. The optical emission at reverse breakdown is weak but is coupled to an optical fiber and detected by a photodiode, indicating its potential for VLSI interconnect. Both theory and experimental results are presented

Keywords

VLSI; avalanche diodes; elemental semiconductors; integrated circuit technology; light emitting diodes; optical interconnections; silicon; Si; avalanche breakdown; indirect bandgap semiconductor; light emitting source; optical fiber; photodiode; reverse breakdown; reverse-biased silicon diode; Avalanche breakdown; Light emitting diodes; Optical interconnections; Optical materials; Photonic band gap; Semiconductor diodes; Semiconductor materials; Silicon; Stimulated emission; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

System Theory, 1989. Proceedings., Twenty-First Southeastern Symposium on

Conference_Location

Tallahassee, FL

ISSN

0094-2898

Print_ISBN

0-8186-1933-3

Type

conf

DOI

10.1109/SSST.1989.72553

Filename

72553