• DocumentCode
    2206255
  • Title

    Advanced chemical mechanical planarization (CMP) process for copper interconnects

  • Author

    Hara, Tohru

  • Author_Institution
    Hosei Univ., Tokyo, Japan
  • Volume
    1
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    386
  • Abstract
    Chemical mechanical planarization (CMP) of copper dual Damascene is described. Dishing of the copper layer can be controlled by the CMP employing non-abrasive MnO2 slurry. Removal rate ratio of the Cu/barrier layer can be reduced from 2.8 to unity with doping of antioxide additive in the slurry. Dishing still appears at the rate of 2.8 and dishing free CMP can be attained at unit. Scratches are formed in this CMP
  • Keywords
    chemical mechanical polishing; copper; integrated circuit interconnections; integrated circuit metallisation; CMP; Cu; Cu dual Damascene; Cu interconnects; antioxide additive doping; chemical mechanical planarization; dishing; nonabrasive MnO2 slurry; removal rate ratio; scratches; Copper; Doping; Grain boundaries; Integrated circuit interconnections; Large scale integration; Manufacturing; Planarization; Slurries; Sputtering; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    0-7803-6520-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2001.981501
  • Filename
    981501
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2206255