The impact of reverse tone (n+ & p+ implant) mask and its mis-alignment on salicidation process integration

Author

Ling, Zhi-Min ; Vo, Tony ; La, Tho

Author_Institution

Adv. Product Group, Xilinx Inc., San Jose, CA, USA

Volume

1

fYear

2001

fDate

2001

Firstpage

448

Abstract

This work is to analyze the impact of a reverse tone (n+ & p+ implant) mask and its misalignment on salicidation process integration. A misalignment of an n+ implant mask causes a p-tap area to receive an n+ implant that forms an n region inside the p-tap. During the normal chip operation, the n-well is connected to Vcc and the p-tap is grounded. The TiSi process enables the electrically connection (shorted) of an n-type region inside a p-tap area. This creates a potential leakage path between the n-type region inside the p-tap (Ground) and n-well (Vcc)

Keywords

failure analysis; integrated circuit metallisation; integrated circuit reliability; ion implantation; leakage currents; masks; photolithography; TiSi; TiSi process; failure diagnosis; in-line photolithography process; leakage path; mask misalignment; n+ implant mask; n-well misalignment; p-tap area; reverse tone mask; salicidation process integration; standby leakage failure; Acceleration; Failure analysis; Implants; Lithography; Logic; Manufacturing processes; Process design; Production; Scanning electron microscopy; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981514

Filename

981514