Effects of stress on formation of silicides on silicon-on-insulator wafers

Author

Liu, C.-H. ; Liew, S.C. ; Cheng, S.L. ; Chen, L.J.

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

1

fYear

2001

fDate

2001

Firstpage

477

Abstract

Effects of stress on the formation of titanium and nickel silicides on silicon-on-insulator (SOI) wafers have been investigated by sheet resistance measurements, glancing-angle x-ray diffraction analysis and transmission electron microscopy. Tensile stress was induced by the difference of thermal expansion coefficients of Si and SiO₂. The thinner the top silicon layer, the higher tensile stress was induced. The formation of both Ti and Ni silicides was found to be enhanced by the tensile stress. The results indicated that the tensile stress promotes the atomic diffusion at the interface to facilitate the formation of metal silicides

Keywords

X-ray diffraction; chemical interdiffusion; electrical resistivity; elemental semiconductors; interface structure; internal stresses; nickel compounds; semiconductor-metal boundaries; silicon; silicon compounds; silicon-on-insulator; thermal expansion; titanium compounds; transmission electron microscopy; SOI; Si-SiO₂-TiSi₂-Ni₂Si; atomic diffusion; glancing-angle x-ray diffraction; interface; nickel silicides; sheet resistance; silicides; silicon-on-insulator wafers; stress; tensile stress; thermal expansion coefficients; titanium silicides; transmission electron microscopy; Electrical resistance measurement; Nickel; Silicides; Silicon on insulator technology; Tensile stress; Thermal expansion; Thermal stresses; Titanium; Transmission electron microscopy; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981522

Filename

981522