The effect of Pd addition on silicide formation for Ni/Pd bilayers on silicon

Ni/Pd bilayers were deposited on n-Si (100) substrates and annealed up to 900°C using rapid thermal annealing (RTA). Results show that the nucleation temperature for NiSi₂ is delayed due to the Id addition. The higher the Pd addition, the higher the nucleation temperature of NiSi₂. Meanwhile, the PdSi nucleation is promoted because of alloying with Ni and PdSi can be formed at temperature lower than 750°C. When the Ni/Pd/Si samples were annealed at 500°C, the barrier height value of the formed silicide/Si contact is near that of NiSi/Si. Annealing at 600°C increased the barrier height value, which indicates that Ni(Pd)Si was formed. The I-V-T measurements on both Ni/Pd/Si and Ni/Si samples show that, the Schottky barrier formed from Ni/Pd/Si annealed at 600°C has a better linear I-V characteristic and lower leakage current than those of NiSi/Si