Design and simulation of SiGe channel SOI BMHMT

Author

Jing, Wang ; Shu-Rong, Li ; Wei-lian, Guo ; Yun-guang, Zheng

Author_Institution

Microelectron. Dept., Tianjin Univ., China

Volume

1

fYear

2001

fDate

2001

Firstpage

559

Abstract

We address the integrated circuit, adopting SOI (silicon on insulator) structure with SiGe channel BMHMT (Bi-MOS hybrid-mode transistor). It has dynamic threshold voltage and is fit for working at low supply voltage conditions. We have performed the process and device simulation of SiGe channel SOI BMHMT and made comparison with SiGe channel SOI MOSFET and SOI MOSFET. Simulation results show that in terms of p-channel and n-channel device, the driving capabilities of SiGe channel SOI BMHMT are obviously higher than those of SiGe channel SOI MOSFET and SOT MOSFET and the improvement on n-channel device is more obvious

Keywords

BIMOS integrated circuits; Ge-Si alloys; MOSFET; semiconductor device models; silicon-on-insulator; Bi-MOS hybrid-mode transistor; SOI BMHMT; SiGe; SiGe channel; SiGe channel SOI MOSFET; device simulation; driving capabilities; dynamic threshold voltage; integrated circuit; low supply voltage conditions; n-channel; p-channel; process simulation; Bipolar transistors; Doping profiles; Germanium silicon alloys; Low voltage; MOSFET circuits; Scattering; Silicon germanium; Silicon on insulator technology; Substrates; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981541

Filename

981541