Effect of impurity concentration on hot-carrier-effect in deep-sub-micron grooved gate PMOSFETs

Based on the hydro-dynamics energy transport model, the influence of channel and substrate doping density on the hot-carrier-effect immunity in deep-sub-micron grooved gate PMOSFET\´s is studied and explained in terms of device interior physics mechanism. The research results indicate that with the increase of doping density in the channel, the hot-carrier-effect immunity becomes better. While as doping density in substrate rises, the hot-carrier-effect immunity becomes worse. Those mean because that the structure parameters influence the electric field distribution in device and "corner effect" and so do the transportation of carriers