Investigation of hot carrier effects in SOI nMOSFET´s operating in a Bi-MOS mode with mesa isolation

Author

Huang, Ru ; Zhang, Xing ; He, Jin ; Wang, Yangyuan

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

Volume

1

fYear

2001

fDate

2001

Firstpage

661

Abstract

A comprehensive investigation of hot carrier effects in mesa-isolated SOI nMOSFET´s operating in the Bi-MOS mode (abbreviated as Bi-nMOSFET´s) is made in this paper for the first time. As a result of its unique hybrid operation mechanism, significant reduction of hot carrier induced maximum transconductance degradation and threshold voltage shift in the Bi-nMOSFET is observed in comparison with that in the conventional SOI nMOSFET´s. The improved HC degradation behaviors are analyzed. The post-stress base (body) current and stress body current in Bi-nMOSFET´s as a function of the stress time and stress drain voltage were evaluated as further proofs of the aging reasons

Keywords

BIMOS integrated circuits; MOSFET; hot carriers; silicon-on-insulator; Bi-MOS mode with mesa isolation; SOI nMOSFET´s; hot carrier effects; maximum transconductance degradation; post-stress base current; post-stress body current; stress body current; stress drain voltage; stress time; threshold voltage shift; Aging; Degradation; Hot carrier effects; Hot carriers; MOSFET circuits; Semiconductor films; Silicon; Stress; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981565

Filename

981565