DocumentCode
2207957
Title
On "pure self-heating effect" of MOSFET in SOI
Author
Taolei, Zheng ; Jinsheng, Luo ; Xing, Zhang
Author_Institution
Inst. of Microelectron., Xi´´an Jiaotong Univ., China
Volume
1
fYear
2001
fDate
2001
Firstpage
665
Abstract
The electrothermal simulation of high-voltage MOSFET in thin SOI for self-heating effects is performed by means of MIDICI, a commercial 2-D numerical simulator. By varying the thermal conductivity of the buried oxide, we can extract the self-heating effects merely from the great rise in thermal resistance of the substrate, which are defined as the pure self-heating effect. The pure self-heating in SOI MOSFET is also presented for universality of the concept
Keywords
MOSFET; silicon-on-insulator; thermal conductivity; MIDICI; MOSFET in SOI; buried oxide; commercial 2-D numerical simulator; electrothermal simulation; pure self-heating effect; thermal conductivity; thermal resistance; Doping; Electric variables measurement; Electrothermal effects; MOSFET circuits; Microelectronics; Semiconductor films; Silicon on insulator technology; Temperature; Thermal conductivity; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location
Shanghai
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.981566
Filename
981566
Link To Document