• DocumentCode
    2207957
  • Title

    On "pure self-heating effect" of MOSFET in SOI

  • Author

    Taolei, Zheng ; Jinsheng, Luo ; Xing, Zhang

  • Author_Institution
    Inst. of Microelectron., Xi´´an Jiaotong Univ., China
  • Volume
    1
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    665
  • Abstract
    The electrothermal simulation of high-voltage MOSFET in thin SOI for self-heating effects is performed by means of MIDICI, a commercial 2-D numerical simulator. By varying the thermal conductivity of the buried oxide, we can extract the self-heating effects merely from the great rise in thermal resistance of the substrate, which are defined as the pure self-heating effect. The pure self-heating in SOI MOSFET is also presented for universality of the concept
  • Keywords
    MOSFET; silicon-on-insulator; thermal conductivity; MIDICI; MOSFET in SOI; buried oxide; commercial 2-D numerical simulator; electrothermal simulation; pure self-heating effect; thermal conductivity; thermal resistance; Doping; Electric variables measurement; Electrothermal effects; MOSFET circuits; Microelectronics; Semiconductor films; Silicon on insulator technology; Temperature; Thermal conductivity; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    0-7803-6520-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2001.981566
  • Filename
    981566