DocumentCode
2207999
Title
Stress Induced Leakage Currents and Charge Trapping in Thin Zr- and Hf-Silicate Layers
Author
Paskaleva, A. ; Lemberger, M. ; Bauer, A.J.
Author_Institution
Inst. of Solid State Phys., Sofia
fYear
0
fDate
0-0 0
Firstpage
551
Lastpage
554
Abstract
In this paper, reliability aspects of thin Zr- and Hf-silicate layers are addressed by analyzing the stress induced leakage current (SILC) and charge trapping during constant voltage stress (CVS) and constant current stress (CCS). Voltage polarity and temperature effects on the degradation of the layers are also studied. SILC is found to have a transient component and its recovery is explained by the trapping/detrapping of traps participating in Poole-Frenkel conduction
Keywords
dielectric materials; elemental semiconductors; hafnium; leakage currents; semiconductor device reliability; zirconium; Hf; Poole-Frenkel conduction; Zr; charge trapping; constant current stress; constant voltage stress; stress induced leakage currents; temperature effects; thin silicate layers; voltage polarity; Carbon capture and storage; Degradation; Electron traps; High K dielectric materials; High-K gate dielectrics; Leakage current; Performance evaluation; Stress measurement; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2006 25th International Conference on
Conference_Location
Belgrade
Print_ISBN
1-4244-0117-8
Type
conf
DOI
10.1109/ICMEL.2006.1651025
Filename
1651025
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