Reliability Investigation of NLDEMOS in 0.13um SOI CMOS Technology

Author

Lachenal, D. ; Rey-Tauriac, Y. ; Boissonnet, L. ; Bravaix, A.

Author_Institution

STMicroelectronics, Crolles

fYear

0

fDate

0-0 0

Firstpage

555

Lastpage

558

Abstract

This paper presents new reliability investigations in NLDEMOS transistor in 0.13 mum SOI CMOS technology. Reliability tests under hot carrier injections (HCI) and OFF state regimes show a strong dependence with the drain extension length L_ext. The use of borderless nitride in order to create contacts is suspected to be the origin of degradation. Mobiles charges in this nitride can move under electrical field in HCI or OFF-state stress and then modulate the conductivity of the drain extension region. With a reverse electrical field applied after OFF-state (drain) or HCI stress, we show that the degraded NLDEMOS can completely recover its initial performances. A novel nitride borderless with a decrease of SiH₄ rate during process step shows a strong reliability improvement due to the decrease of dangling bonds at SiPROT/bordeless nitride interface

Keywords

CMOS integrated circuits; MOSFET; hot carriers; semiconductor device reliability; silicon-on-insulator; 0.13 micron; NLDEMOS transistor; OFF state regimes; SOI CMOS technology; SiPROT; borderless nitride; drain extension region; hot carrier injections; reliability investigation; reliability tests; reverse electrical field; CMOS technology; Circuits; Contacts; Degradation; Human computer interaction; MOSFETs; Packaging; Radio frequency; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2006 25th International Conference on

Conference_Location

Belgrade

Print_ISBN

1-4244-0117-8

Type

conf

DOI

10.1109/ICMEL.2006.1651026

Filename

1651026