A 5 GHz above-IC FBAR low phase noise balanced oscillator

Author

Aissi, Mohammed ; Tournier, Eric ; Dubois, Marc Alexandre ; Billard, Christophe ; Ziad, Hocine ; Plana, Robert

Author_Institution

LAAS, Toulouse

fYear

2006

fDate

11-13 June 2006

Lastpage

28

Abstract

In this paper, a 5 GHz FBAR based balanced oscillator is presented. The FBAR resonator was integrated directly above the 0.35 mum BiCMOS IC oscillator. The use of the balanced configuration allows dividing by two the electrodes resistance of the FBAR. Therefore, better phase noise is obtained comparatively to the single ended version. The measured phase noise is -121 dBc/Hz at 100 kHz from 5.46 GHz carrier frequency. Furthermore, the differential output allows direct driving of the divider and mixer, which are generally balanced, without the need of a single-ended to differential converter

Keywords

BiCMOS integrated circuits; acoustic resonators; bulk acoustic wave devices; frequency dividers; integrated circuit noise; microwave oscillators; mixers (circuits); phase noise; 0.35 micron; 100 kHz; 5 GHz; 5.46 GHz; BiCMOS IC oscillator; FBAR balanced oscillator; FBAR resonator; differential converter; electrodes resistance; film bulk acoustic wave resonators; low phase noise balanced oscillator; BiCMOS integrated circuits; Electrical resistance measurement; Electrodes; Film bulk acoustic resonators; Frequency measurement; Mixers; Noise measurement; Oscillators; Phase measurement; Phase noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-9572-7

Type

conf

DOI

10.1109/RFIC.2006.1651082

Filename

1651082