A single-chip 0.13 /spl mu/m CMOS UMTS W-CDMA multi-band transceiver

Author

Koller, R. ; Rühlicke, T. ; Pimingsdorfer, D. ; Adler, B.

Author_Institution

Danube Integrated Circuit Eng. GmbH, Linz

fYear

2006

fDate

11-13 June 2006

Lastpage

164

Abstract

A single-chip, fully-integrated 3G UMTS/W-CDMA transceiver covering all operating bands specified by the current UMTS FDD standard has been implemented in a standard 0.13 mum CMOS process for use in FDD mobile applications. The design includes two fractional-N synthesizers with fully-integrated VCOs, on-chip tuning and PLLs as well as the zero-IF receiver and direct-upconversion transmitter paths. The chip is mounted in an extremely small lead-less package with just 5-by-5 mm outline dimensions and a maximum height of 0.8 mm and fully complies with ARIB W-CDMA and UMTS standards

Keywords

3G mobile communication; CMOS integrated circuits; code division multiple access; phase locked loops; transceivers; voltage-controlled oscillators; 0.13 micron; 0.8 mm; 3G UMTS/W-CDMA transceiver; 5 mm; ARIB W-CDMA standards; CMOS UMTS W-CDMA transceiver; CMOS process; FDD mobile applications; UMTS standards; direct-upconversion transmitter; fractional-N synthesizers; lead-less package; multiband transceiver; phase locked loop; voltage controlled oscillator; zero-IF receiver; 3G mobile communication; CMOS process; Filters; Germanium silicon alloys; Multiaccess communication; Silicon germanium; Synthesizers; Transceivers; Transmitters; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-9572-7

Type

conf

DOI

10.1109/RFIC.2006.1651116

Filename

1651116