DocumentCode
2210213
Title
Characterization of RBSOA of high power bipolar transistors using a nondestructive tester
Author
Jovanovic, Milan M. ; Lee, Fred C. ; Chen, Dan Y.
Author_Institution
Department of Electrical Engineering, Virginia Polytechnic Institute and State University, Blacksburg, 24061, U.S.A.
fYear
1985
fDate
24-28 June 1985
Firstpage
440
Lastpage
447
Abstract
Reverse-bias safe operating area (RBSOA) of high power Darlington transistors are characterized using a 120A/1000V nondestructive reverse-bias second breakdown tester designed and fabricated at VPI&SU. Elaborate RBSOA characteristics are generated with different forward/reverse base drives and collector current levels. The effects of elevated case temperature and second-base drive on RBSOA of four-terminal Darlington devices are also discussed.
Keywords
Electric breakdown; Power transistors; Shunts (electrical); Temperature measurement; Testing; Transistors; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1985 IEEE
Conference_Location
Toulouse, France
ISSN
0275-9306
Type
conf
DOI
10.1109/PESC.1985.7070979
Filename
7070979
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