DocumentCode
2210235
Title
Hydrogen Response Mechanism of a Proton Pumping Gate FET Gas Sensor
Author
Tsukada, Keiji ; Yamaguchi, Tomiharu ; Kiwa, Toshihiko ; Yamada, Hironobu
Author_Institution
Okayama Univ., Okayama
fYear
2007
fDate
28-31 Oct. 2007
Firstpage
1326
Lastpage
1329
Abstract
We developed a new type hydrogen sensor for a proton pumping gate FET with a triple layer of Pd / proton conducting polymer / Pt. Compared with conventional type FET with a single catalytic metal gate, the selectivity was improved. Furthermore, two different output signals of DC and AC modulation were obtained. According to increments of the upper gate voltage to a lower gate, the sensitivity was increased. When modulation voltage was added to the upper gate voltage, AC modulation output was obtained. The response mechanism of the new type FET was investigated using several hydrogen gases and with modulation conditions. Consequently, the hydrogen response mechanism can be explained by a hydrogen dissociation reaction occurring at the upper gate, and the hydrogen gas and generated proton can pass through the proton conducting polymer, and finally an equilibrium hydrogen reaction occurs at the lower gate. These complex mechanisms can be controlled by the gate bias and modulation voltage.
Keywords
conducting polymers; field effect transistors; gas sensors; AC modulation; DC modulation; hydrogen dissociation reaction; hydrogen gases; hydrogen response mechanism; hydrogen sensor; modulation conditions; modulation voltage; proton conducting polymer; proton pumping gate FET gas sensor; single catalytic metal gate; FETs; Gas detectors; Gases; Hydrogen; Metal-insulator structures; Polymers; Protons; Stability; Temperature sensors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2007 IEEE
Conference_Location
Atlanta, GA
ISSN
1930-0395
Print_ISBN
978-1-4244-1261-7
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2007.4388655
Filename
4388655
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