• DocumentCode
    2210830
  • Title

    An SOI CMOS, high gain and low noise transimpedance-limiting amplifier for 10Gb/s applications

  • Author

    Pera, Florin ; Voinigescu, Sorin P.

  • Author_Institution
    Innovative Syst. & Technol. Corp., Kanata, Ont.
  • fYear
    2006
  • fDate
    11-13 June 2006
  • Lastpage
    360
  • Abstract
    This paper presents a low noise, high gain transimpedance-limiting amplifier (TIALA) design for 10Gb/s applications, implemented in a 0.13mum SOI CMOS technology. Powered from a single 1.5V supply and consuming 165mW, the TIALA features auto-zero DC feedback and has 25muApp input current sensitivity (an estimated -16dBm optical sensitivity) with over 40dB electrical dynamic range and 14 kOhm linear gain
  • Keywords
    CMOS integrated circuits; low noise amplifiers; operational amplifiers; silicon-on-insulator; 0.13 micron; 1.5 V; 10 Gbit/s; 14 kohm; 165 mW; 25 muA; SOI CMOS technology; TIALA design; auto-zero DC feedback; input current sensitivity; optical sensitivity; transimpedance-limiting amplifier design; CMOS technology; Capacitors; Circuit noise; Germanium silicon alloys; Inductors; Low-noise amplifiers; MOS devices; Optical amplifiers; Silicon germanium; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    0-7803-9572-7
  • Type

    conf

  • DOI
    10.1109/RFIC.2006.1651165
  • Filename
    1651165