Layout optimization of RF CMOS in the 90nm generation by a physics-based model including the multi-finger wiring effect

Author

Nakamura, A. ; Yoshikawa, N. ; Miyazako, T. ; Oishi, T. ; Ammo, H. ; Takeshita, K.

Author_Institution

Semicond. Bus. Unit, Sony Corp., Atsugi

fYear

2006

fDate

11-13 June 2006

Abstract

The multi-finger layout optimization of RF CMOS in the 90nm generation based on a physics-based model is presented. The key features of the physics-based model which was developed are that 1) the transistor model includes a wiring and substrate model of the multi-finger layout, and 2) the physical parameters are adopted from DC measurements and TCAD simulation. By means of a physics-based model, the dependence of ft/fmax on Wf (channel width of one finger) is simulated within 12% accuracy. The dominant parameters of ft/fmax are analyzed by sensitivity analysis. After optimization, fmax experiment data showed a 40% increase (166GHz) from the initial layout

Keywords

CMOS integrated circuits; circuit optimisation; integrated circuit layout; integrated circuit modelling; sensitivity analysis; technology CAD (electronics); wiring; 90 nm; DC measurements; RF CMOS; TCAD simulation; multifinger layout optimization; multifinger wiring effect; physics-based model; sensitivity analysis; Circuit topology; Cost function; Fingers; MOSFETs; Measurement standards; Physics; Radio frequency; Semiconductor device modeling; Sensitivity analysis; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-9572-7

Type

conf

DOI

10.1109/RFIC.2006.1651169

Filename

1651169