DocumentCode
2211006
Title
Circuit model of a SiGe HBT flip-chip mounted onto a silicon carrier
Author
Norling, Martin ; Gevorgian, Spartak
Author_Institution
Dept. of Microtechnology & Nanoscience, Chalmers Univ. of Technol., Gothenburg
fYear
2006
fDate
11-13 June 2006
Lastpage
380
Abstract
This paper reports the circuit model of a SiGe HBT transistor flip chipped onto a high-resistivity silicon carrier (substrate). It includes the parasitic capacitances and inductances associated with bumps, the flipped transistor chip and takes into account the effect of the high-permittivity ferroelectric film deposited on the silicon carrier
Keywords
Ge-Si alloys; bipolar integrated circuits; elemental semiconductors; ferroelectric thin films; flip-chip devices; heterojunction bipolar transistors; integrated circuit modelling; permittivity; silicon; SiGe; SiGe HBT flip-chip; SiGe HBT transistor; circuit model; high-permittivity ferroelectric film; high-resistivity silicon carrier; parasitic capacitances; parasitic inductances; Circuits; Conductivity; Ferroelectric films; Germanium silicon alloys; Gold; Heterojunction bipolar transistors; Microwave transistors; Silicon germanium; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-9572-7
Type
conf
DOI
10.1109/RFIC.2006.1651170
Filename
1651170
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