• DocumentCode
    2211163
  • Title

    Plasma implantation of cylindrical bore - a reality?

  • Author

    Xiubo Tian ; Chu, Paul K.

  • Author_Institution
    Dept. of Phys. & Mater. Sci., City Univ. of Hong Kong, Kowloon, China
  • fYear
    2002
  • fDate
    26-30 May 2002
  • Firstpage
    258
  • Abstract
    Summary form only given. Plasma immersion ion implantation has successfully been applied to treat the outer surface of objects with an irregular geometry. Theoretical and experimental investigations have also demonstrated the capability to implant the inner surfaces of cylindrical bores. However, practical implementation of the process is not straightforward due to the finite plasma volume confined within the bore and the large non-uniformity of plasma density in the bore. The incident ions hardly obtain the full acceleration voltage since the plasma sheath expands rapidly, and to make things worse, it is difficult to apply a high voltage on the inner wall if the bore radius is too small or the plasma density is too low, as confirmed by our numerical analysis. Besides, the plasma in the bore depletes abruptly once the negative pulse is applied. This time scale is smaller than 1 /spl mu/s that is approximately the rise time of the implantation pulse. This further lowers the energy of the incident ions and requires more powerful power modulators, for instance, one capable of producing a rise time of less than 1 /spl mu/s; otherwise, the implantation process may end before the pulse voltage reaches the voltage plateau. The design of such a piece of hardware is difficult in practice.
  • Keywords
    numerical analysis; plasma density; plasma immersion ion implantation; plasma sheaths; plasma-wall interactions; acceleration voltage; cylindrical bore; design; implantation process; implantation pulse; incident ions; inner surfaces; irregular geometry; nonuniformity; outer surface; plasma density; plasma immersion ion implantation; plasma sheath; power modulators; pulse voltage; rise time; time scale; voltage plateau; Boring; Geometry; Plasma accelerators; Plasma confinement; Plasma density; Plasma immersion ion implantation; Plasma sheaths; Pulse modulation; Surface treatment; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Science, 2002. ICOPS 2002. IEEE Conference Record - Abstracts. The 29th IEEE International Conference on
  • Conference_Location
    Banff, Alberta, Canada
  • Print_ISBN
    0-7803-7407-X
  • Type

    conf

  • DOI
    10.1109/PLASMA.2002.1030537
  • Filename
    1030537