Simulation of 3D charging effect and neutral beam transports in dry-etching using PIC code

Summary form only given, as follows. As semiconductor manufacturing moves toward nano-scale device, the reliability of devices through influence of plasma process induced damage is one of important problems for plasma etching process. Charge effect that ions accumulate in the shallow trench causes charging damage such as notching and earlier etching stop. For that reason, it has to be eliminated, and an optimized condition for the reduction of charging damage can be suggested using simulation. We have developed three dimensional charging simulator for the analysis of charge effect in the shallow trench and have proposed a neutral beam etching to overcome charging damage. The potential profile at the trench is produced by the difference of energy and angle distributions of ions and electrons. It is confirmed by 3D PIC charging simulator which is verified from being compared with 2D charging simulator. In addition, the variation of potential at top and bottom of trench is observed by changing process conditions such as aspect ratio and electron temperature.