DocumentCode
2211411
Title
Orbital quantum bit in Si quantum dots
Author
Ahn, D. ; Hwnag, S.W.
Author_Institution
Univ. of Seoul, Seoul
Volume
1
fYear
2006
fDate
22-25 Oct. 2006
Firstpage
104
Lastpage
107
Abstract
In this paper, current status of experimental and theoretical work on quantum bits based on the semiconductor quantum dots in the University of Seoul will be presented. A new proposal utilizing the multi-valley quantum state transitions in a Si quantum dot as a possible candidate for a quantum bit with a long decoherence time will be also given. Qubits are the multi-valley symmetric and anti-symmetric orbitals. Evolution of these orbitals is controlled by an external electric field, which turns on and off the inter-valley interactions. Initialization is achieved by turning on the inter-valley Hamiltonian to let the system settle down to the symmetric orbital state. Estimates of the decoherence time is made for the longitudinal acoustic phonon process.
Keywords
semiconductor quantum dots; silicon; Si; Si - Element; Si quantum dots; anti-symmetric orbitals; multi-valley quantum state transitions; orbital quantum bit; semiconductor quantum dots; Ellipsoids; Information processing; Phonons; Proposals; Quantum computing; Quantum dots; Quantum mechanics; Shape; Silicon; Wave functions; Inter-valley interactions; Obital quantum bits; Si Quantum dots;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location
Gyeongju
Print_ISBN
978-1-4244-0541-1
Electronic_ISBN
978-1-4244-0541-1
Type
conf
DOI
10.1109/NMDC.2006.4388706
Filename
4388706
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