• DocumentCode
    2211411
  • Title

    Orbital quantum bit in Si quantum dots

  • Author

    Ahn, D. ; Hwnag, S.W.

  • Author_Institution
    Univ. of Seoul, Seoul
  • Volume
    1
  • fYear
    2006
  • fDate
    22-25 Oct. 2006
  • Firstpage
    104
  • Lastpage
    107
  • Abstract
    In this paper, current status of experimental and theoretical work on quantum bits based on the semiconductor quantum dots in the University of Seoul will be presented. A new proposal utilizing the multi-valley quantum state transitions in a Si quantum dot as a possible candidate for a quantum bit with a long decoherence time will be also given. Qubits are the multi-valley symmetric and anti-symmetric orbitals. Evolution of these orbitals is controlled by an external electric field, which turns on and off the inter-valley interactions. Initialization is achieved by turning on the inter-valley Hamiltonian to let the system settle down to the symmetric orbital state. Estimates of the decoherence time is made for the longitudinal acoustic phonon process.
  • Keywords
    semiconductor quantum dots; silicon; Si; Si - Element; Si quantum dots; anti-symmetric orbitals; multi-valley quantum state transitions; orbital quantum bit; semiconductor quantum dots; Ellipsoids; Information processing; Phonons; Proposals; Quantum computing; Quantum dots; Quantum mechanics; Shape; Silicon; Wave functions; Inter-valley interactions; Obital quantum bits; Si Quantum dots;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
  • Conference_Location
    Gyeongju
  • Print_ISBN
    978-1-4244-0541-1
  • Electronic_ISBN
    978-1-4244-0541-1
  • Type

    conf

  • DOI
    10.1109/NMDC.2006.4388706
  • Filename
    4388706