DocumentCode
2211861
Title
A novel 1.55 /spl mu/m HBT-electroabsorption modulator
Author
Schneider, M. ; Reimann, T. ; Heinzelmann, R. ; Stohr, A. ; Velling, P. ; Neumann, S. ; Bertenburg, R.M. ; Tegude, F.-J. ; Jager, D.
Author_Institution
ZHO-FG Optoelektronik, Gerhard Mercator Univ., Duisburg, Germany
fYear
2002
fDate
7-9 Jan. 2002
Firstpage
21
Lastpage
24
Abstract
We present a novel waveguide electroabsorption modulator (EAM), integrated into the collector region of a heterostructure bipolar transistor (HBT). The novel device shows an optical modulation contrast of 7.5 dB and a 3 dB cut-off frequency of 7 GHz.
Keywords
electro-optical modulation; electroabsorption; heterojunction bipolar transistors; integrated optoelectronics; microwave photonics; optical communication equipment; optical waveguide components; 1.55 micron; 7 GHz; HBT collector region integration; HBT electroabsorption modulator; heterostructure bipolar transistor; monolithically integrated device; optical modulation contrast; waveguide EA modulator; Doping; Electric variables measurement; Erbium-doped fiber amplifier; Indium phosphide; Optical buffering; Optical filters; Optical modulation; Optical waveguides; Probes; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Photonics, 2001. MWP '01. 2001 International Topical Meeting on
Conference_Location
Long Beach, CA, USA
Print_ISBN
0-7803-7003-1
Type
conf
DOI
10.1109/MWP.2002.981786
Filename
981786
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