Measurement and modelling of the emitter resistance of polysilicon emitter transistors

Author

Wolstenholme, G R ; Ashburn, P. ; Jorgensen, N. ; Gold, D. ; Booker, G.R.

Author_Institution

Dept. of Electron. & Comput. Sci., Southampton Univ., UK

fYear

1988

fDate

12-13 Sep 1988

Firstpage

55

Lastpage

58

Abstract

A method for measuring the emitter resistance of polysilicon emitter transistors is described that separates the interface and metal/polysilicon contact components of the emitter resistance. Results show that for devices with a continuous interfacial layer the interface resistance controls the emitter resistance and is between 200 and 450 Ωμm². This resistance is found to be current dependent and good agreement between theory and experiment is obtained. Results for devices with a discontinuous interfacial layer indicate that low interface resistances (17-33 Ωμm²) suitable for VLSI applications can be obtained by deliberately breaking up the interfacial layer. In this case the metal contact resistance contributes significantly to the total emitter resistance

Keywords

bipolar transistors; contact resistance; electric resistance measurement; elemental semiconductors; semiconductor device models; silicon; Si; continuous interfacial layer; discontinuous interfacial layer; emitter resistance; interface resistance; metal contact resistance; modelling; polysilicon emitter transistors; resistance measurement; Computer science; Conductivity; Contact resistance; Current measurement; Electrical resistance measurement; Equations; Gold; Inorganic materials; Transistors; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1988., Proceedings of the 1988

Conference_Location

Minneapolis, MN

Type

conf

DOI

10.1109/BIPOL.1988.51044

Filename

51044