Magnetic and electronic properties of Mn delta-doped (Ga0.995Mn0.005)N thin films

Author

Jeon, H.C. ; Kang, T.W. ; Kim, T.W. ; Kang, Joongoo ; Chang, K.J.

Author_Institution

Dept. of Phys., Dongguk Univ., Seoul

Volume

1

fYear

2006

fDate

22-25 Oct. 2006

Firstpage

400

Lastpage

401

Abstract

The magnetization curve as a function of the magnetic field as 5 K indicated that the magnetization in the (Ga_0.995Mn_0.005)N thin film is significantly enhanced due to Mn delta-doping. The magnetization curve as a function of the temperature showed that the Curie temperature of the Mn delta-doped (Ga_0.995Mn_0.005)N thin film was estimated to be above room temperature. The theoretical results showed that Ga vacancies near the Mn delta-doping layer were likely to cause p-type conductance.

Keywords

Hall effect; SQUIDs; magnetic thin films; magnetisation; manganese; molecular beam epitaxial growth; semimagnetic semiconductors; Curie temperature; delta doping; electronic properties; magnetic properties; magnetization curve; thin films; Buffer layers; Gallium nitride; Magnetic fields; Magnetic films; Magnetic materials; Magnetic properties; Magnetization; Semiconductor thin films; Temperature; Transistors; (Ga0.995Mn0.005)N thin film; Mn delta-doping; high Curie temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE

Conference_Location

Gyeongju

Print_ISBN

978-1-4244-0540-4

Electronic_ISBN

978-1-4244-0541-1

Type

conf

DOI

10.1109/NMDC.2006.4388786

Filename

4388786