Modeling and evaluation for electrical characteristics of through-strata-vias (TSVS) in three-dimensional integration

Author

Xu, Zheng ; Beece, Adam ; Rose, Kenneth ; Zhang, Tong ; Lu, Jian-Qiang

Author_Institution

Dept. of Electr., Comput., & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA

fYear

2009

fDate

28-30 Sept. 2009

Firstpage

1

Lastpage

9

Abstract

This paper discusses through-strata-vias (TSVs) technology and presents modeling results of their electrical performance using Agilent´s ADS and Momentum simulator. Since TSV is an essential component in three-dimensional (3D) integration/packaging, it is important to explore and investigate its electrical characteristics. A simple face-to-back TSV is studied in frequency domain and time domain. The impact of physical configurations and materials on TSV electrical characteristics is evaluated. An equivalent circuit model is proposed, and the values of passive elements (resistance, inductance and capacitance) within the model are extracted from full-wave scattering parameters.

Keywords

S-parameters; equivalent circuits; integrated circuit modelling; integrated circuit packaging; time-frequency analysis; Agilent ADS simulator; electrical characteristics; equivalent circuit model; frequency-domain analysis; full-wave scattering parameters; momentum simulator; passive elements; three-dimensional integration; three-dimensional packaging; through-strata-vias technology; time-domain analysis; Capacitance; Circuit simulation; Electric resistance; Electric variables; Equivalent circuits; Frequency domain analysis; Inductance; Packaging; Scattering parameters; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

3D System Integration, 2009. 3DIC 2009. IEEE International Conference on

Conference_Location

San Francisco, CA

Print_ISBN

978-1-4244-4511-0

Electronic_ISBN

978-1-4244-4512-7

Type

conf

DOI

10.1109/3DIC.2009.5306543

Filename

5306543