DocumentCode
2213708
Title
A Simple Technique for Improving the IM3/C and PAE Performance of MESFET Amplifiers
Author
Wong, J N H ; Aitchison, C.S.
Author_Institution
Microwave Systems Research Group, Advanced Technology Institute, University of Surrey, Guildford, Surrey GU2 7XH, UK
fYear
2003
fDate
Oct. 2003
Firstpage
281
Lastpage
284
Abstract
This paper shows by simulation that a shunt short -circuited ¿ 4 line placed across the drain terminals of a microwave MESFET amplifier significantly improves both the IM3/C and 2-tone PAE performance by a maximum of 14dB and 3%(from 24.5% to 27.5%), respectively. Practical confirmation with both WCDMA and GSM-EDGE input signals is obtained with a microstrip amplifier at 2GHz demonstrating an average improvement in ACPR of 12.5dB and a reduction in EVM from 5.0% to 1.3% respectively. The technique is novel, simple and practical and will be of direct interest to designers of base station amplifiers.
Keywords
Circuit simulation; Frequency; Gallium arsenide; Impedance; Linearity; MESFETs; Microstrip; Microwave amplifiers; Microwave theory and techniques; Power amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2003 33rd European
Conference_Location
Munich, Germany
Print_ISBN
1-58053-834-7
Type
conf
DOI
10.1109/EUMA.2003.340945
Filename
4143009
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