DocumentCode
2214345
Title
A SiGe HEMT Mixer IC with Low Conversion Loss
Author
Kallfass, I. ; Gruson, F. ; Abele, P. ; Michelakis, K. ; Hackbarth, T. ; Hieber, K.-H. ; Müller, J. ; Schumacher, H.
Author_Institution
Department of Electron Devices and Circuits, University of Ulm, Albert-Einstein-Allee 45, 89081 Ulm, Germany. ikall@ebs.e-technik.uni-ulm.de
fYear
2003
fDate
Oct. 2003
Firstpage
407
Lastpage
410
Abstract
The authors present the first SiGe HEMT mixer integrated circuit. The active mixer stage, operating up to 10GHz RF, has been designed and realized using a 0.1 ¿m gate length transistor technology. The design is based on a new large-signal simulation model developed for the SiGe HEMT. Good agreement between simulation and measurement is reached. The mixer exhibits 4.0dB and 4.7dB conversion loss when down-converting 3.0GHz and 6.0GHz signals, respectively, to an intermediate frequency of 500MHz using high-side injection of 5dBm local oscillator power. Conversion loss is less than 8dB for RF frequencies up to 10GHz with a mixer linearity of ¿8.8dBm input related 1dB compression point.
Keywords
Circuit simulation; Frequency conversion; Germanium silicon alloys; HEMTs; Integrated circuit measurements; Integrated circuit technology; Local oscillators; Mixers; Radio frequency; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2003 33rd European
Conference_Location
Munich, Germany
Print_ISBN
1-58053-834-7
Type
conf
DOI
10.1109/EUMA.2003.340976
Filename
4143040
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