DocumentCode
2214379
Title
Influence of 3D integration on 2D interconnections and 2D self inductors HF properties
Author
Roullard, J. ; Capraro, S. ; Lacrevaz, T. ; Cadix, L. ; Eid, E. ; Farcy, A. ; Flechet, B.
Author_Institution
IMEP-LAHC, Univ. Savoie, Le Bourget du Lac, France
fYear
2009
fDate
28-30 Sept. 2009
Firstpage
1
Lastpage
6
Abstract
In this study, effects due to 3D level stack on HF properties of 2D interconnections and 2D self inductors integrated in the back end of line (BEOL) are investigated. Self-inductors are considered as self coupled interconnects around a long loop where the magnetic field is confined. So, simple and coupled 2D interconnections of BEOL are studied in order to determine the influence of the silicon substrate stack on propagation delay, crosstalk and factor quality of 2D interconnects and self-inductors.
Keywords
Q-factor; inductors; integrated circuit interconnections; 2D interconnection; 2D self inductors HF properties; 3D integration; 3D level stack; Si; back end of line; crosstalk; magnetic field; propagation delay; silicon substrate stack; Conductors; Copper; Delay effects; Hafnium; Inductors; Insulation; Integrated circuit interconnections; Metallization; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
3D System Integration, 2009. 3DIC 2009. IEEE International Conference on
Conference_Location
San Francisco, CA
Print_ISBN
978-1-4244-4511-0
Electronic_ISBN
978-1-4244-4512-7
Type
conf
DOI
10.1109/3DIC.2009.5306580
Filename
5306580
Link To Document