• DocumentCode
    2215065
  • Title

    III-V semiconductor nanoelectronics for post si era

  • Author

    Hasegawa, Hideki

  • Author_Institution
    Hokkaido Univ., Sappro
  • Volume
    1
  • fYear
    2006
  • fDate
    22-25 Oct. 2006
  • Firstpage
    266
  • Lastpage
    267
  • Abstract
    Scaling limit of Si CMOS technology and advent of "Ubiquitous Network Era" seem to open up new horizon for III-V nanoelectronics with much wider application areas than today. Here, its future challenges and key issues are discussed.
  • Keywords
    CMOS integrated circuits; III-V semiconductors; nanoelectronics; silicon; CMOS technology; III-V semiconductor nanoelectronics; Si; Si - Element; post Si era; ubiquitous network era; Biosensors; CMOS technology; Chemical and biological sensors; Energy consumption; III-V semiconductor materials; Intelligent sensors; Nanoelectronics; Nanotechnology; Nanowires; Quantum computing; III-V compound semiconductors; gate dielectrics; nanoelectronics; nanostructure; surface passivation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
  • Conference_Location
    Gyeongju
  • Print_ISBN
    978-1-4244-0541-1
  • Electronic_ISBN
    978-1-4244-0541-1
  • Type

    conf

  • DOI
    10.1109/NMDC.2006.4388862
  • Filename
    4388862
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2215065