• DocumentCode
    2215180
  • Title

    Modeling impact ionization in advanced bipolar transistors for device/circuit simulation

  • Author

    Jeong, Hanggeun ; Fossum, Jerry G.

  • Author_Institution
    Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
  • fYear
    1988
  • fDate
    12-13 Sep 1988
  • Firstpage
    107
  • Lastpage
    110
  • Abstract
    Impact ionization in advanced bipolar transistors, which depends on the complex electric-field distribution in the collector, is accounted for in a physical (seminumerical) device model. The collector analysis comprehensively treats quasi-saturation, and thus accounts for the formation of the current-induced space-charge region at high currents as well as the modulation of the junction space-charge region. Simulated (with MMSPICE) and measured characteristics are compared in support of the model
  • Keywords
    bipolar transistors; impact ionisation; semiconductors; space charge; MMSPICE; bipolar transistors; circuit simulation; collector analysis; current-induced space-charge region; electric-field distribution; impact ionization; physical device model; quasi-saturation; Bipolar transistors; Circuit simulation; Current density; Current-voltage characteristics; Electric breakdown; Electrons; Impact ionization; Integrated circuit modeling; Semiconductor process modeling; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar Circuits and Technology Meeting, 1988., Proceedings of the 1988
  • Conference_Location
    Minneapolis, MN
  • Type

    conf

  • DOI
    10.1109/BIPOL.1988.51057
  • Filename
    51057
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2215180