DocumentCode
2215276
Title
Compact Low Phase-Noise 23 GHz VCO Fabricated in a Commercial SiGe Bipolar Process
Author
Hancock, Timothy M. ; Gresham, Ian ; Rebeiz, Gabriel M.
Author_Institution
Radiation Laboratory, University of Michigan, 1301 Beal Avenue, Ann Arbor, MI 48109-2122, USA. hancockt@umich.edu
fYear
2003
fDate
Oct. 2003
Firstpage
575
Lastpage
578
Abstract
The design, implementation and measurement of a differential monolithic SiGe VCO at 22.8 GHz is presented. The VCO was designed for a 3.5 V supply voltage with the oscillator core consuming 12 mA of current and the output buffer consuming 22 mA. The circuit area is very compact occupying an area of 230 ¿m x 290 ¿m. The VCO has a measured average output power of 2.2 dBm and an average SSB phase noise of -104 dBc/ Hz at 1 MHz offset from the carrier.
Keywords
Amplitude modulation; Circuits; Germanium silicon alloys; Noise measurement; Phase measurement; Power generation; Power measurement; Process design; Silicon germanium; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2003 33rd European
Conference_Location
Munich, Germany
Print_ISBN
1-58053-834-7
Type
conf
DOI
10.1109/EUMA.2003.341018
Filename
4143082
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