DocumentCode
2215590
Title
Physical and Electrical Modelling of Bonding Wires up to 110 GHz
Author
Descharles, C. ; Algani, C. ; Mercier, B. ; Alquié, G.
Author_Institution
Université Pierre et Marie Curie, Laboratoire des Instruments et Systÿmes d´´Ile-de-France, 4 place Jussieu, BP-252, 75252 PARIS CEDEX 05 - FRANCE
fYear
2003
fDate
Oct. 2003
Firstpage
639
Lastpage
642
Abstract
This paper presents an electrical model of bonding wire effects. This model fits in Ka to W bands and it can be easily used in an electrical simulator. It takes into account the different coupling effects which appear in such structures and it uses analytical formulas to calculate the components of the equivalent circuit. This bonding wire electrical model has been validated by comparing it to 3D electromagnetic simulations and measures. Bonding wire structures have been realised with a MEMs technique developed on a Silicon substrate and they have been characterised up to 110 GHz. The model and the results of simulations and measures are presented and prove that the bonding wire technique can be used in the millimeter wave band.
Keywords
Bonding; Circuit simulation; Coupling circuits; Electric variables measurement; Electromagnetic measurements; Electromagnetic modeling; Equivalent circuits; Millimeter wave measurements; Silicon; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2003 33rd European
Conference_Location
Munich, Germany
Print_ISBN
1-58053-834-7
Type
conf
DOI
10.1109/EUMA.2003.341034
Filename
4143098
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