• DocumentCode
    2215839
  • Title

    0.13 μm Low Voltage Logic Based RF CMOS Technology with 115GHz fT and 80GHz fMAX

  • Author

    Guo, J.C. ; Huang, C.H. ; Chan, K.T. ; Lien, W.Y. ; Wu, C.M. ; Sun, Y.C.

  • Author_Institution
    Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan. Phone: +886-3-5712121 ext. 54158, fax: +886-3-5724361, email: jcguo@ee.nctu.edu.tw
  • fYear
    2003
  • fDate
    4-6 Oct. 2003
  • Firstpage
    683
  • Lastpage
    686
  • Abstract
    Superior RF CMOS of 115GHz fT and 80GHz fmax has been realized by 0.13 μm low voltage logic based RF CMOS technology by aggressive device scaling and optimized layout. NFmin of 2.2dB at 10GHz is achieved even without deep N-well and ground-shielded signal pad. P1dB of near 10dBm can fit bluetooth requirement and 55% PAE at 2.4 GHz address the good potential of sub-100nm CMOS for low voltage RF power applications
  • Keywords
    Bluetooth; CMOS logic circuits; CMOS technology; Fingers; Logic devices; Low voltage; Noise measurement; Performance gain; Radio frequency; Wireless communication;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2003 33rd European
  • Conference_Location
    Munich, Germany
  • Print_ISBN
    1-58053-834-7
  • Type

    conf

  • DOI
    10.1109/EUMA.2003.341045
  • Filename
    4143109
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2215839