• DocumentCode
    2215933
  • Title

    Scaling studies of coaxially gated carbon nanotube MOSFETs

  • Author

    Ahn, Chiyui ; Shin, Mincheol

  • Author_Institution
    Sch. of Eng., Inf. & Commun. Univ., Daejeon
  • Volume
    1
  • fYear
    2006
  • fDate
    22-25 Oct. 2006
  • Firstpage
    548
  • Lastpage
    549
  • Abstract
    The scaling issues for carbon nanotube field-effect transistors with doped nanotubes as source/drain extensions are studied by solving the two-dimensional Poisson equation self-consistently with non-equilibrium Green´s function formalism.
  • Keywords
    MOSFET; Poisson equation; carbon nanotubes; semiconductor doping; Green function formalism; MOSFET; Poisson equation; carbon nanotube field-effect transistors; coaxially gated carbon nanotube; doped nanotubes; CNTFETs; Carbon nanotubes; Charge carrier density; Coaxial components; Dielectric materials; Effective mass; Green´s function methods; MOSFETs; Poisson equations; Voltage; Carbon nanotube field-effect transistors; Nonequilibrium Greens fucntion method; quantum device simulations;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
  • Conference_Location
    Gyeongju
  • Print_ISBN
    978-1-4244-0540-4
  • Electronic_ISBN
    978-1-4244-0541-1
  • Type

    conf

  • DOI
    10.1109/NMDC.2006.4388896
  • Filename
    4388896
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2215933