DocumentCode
2217081
Title
Tribological behavior of copper chemical-mechanical polishing
Author
Xu, G.H. ; Liang, H.
Author_Institution
Dept. of Mech. Eng., Alaska Univ., Fairbanks, AK, USA
Volume
2
fYear
2001
fDate
22-25 Oct. 2001
Firstpage
851
Abstract
This work represents the findings using tribological investigation into the mechanism of the contact-polishing process during chemical-mechanical polishing (CMP) of copper. In order to understand the mechanical impact in CMP, this work simulates the Cu CMP using a laboratory model system. By comparing experimentally determined values, the friction coefficient with a series designed conditions was evaluated. We also at the first time estimated the lubricating behavior of Cu CMP. Experimental evidence proves that the Cu CMP performs as a lubricating system. In the conditions investigated, the boundary lubrication and elasto-hydrodynamic lubrication regimes were reached. Results indicate that measured friction is sensitive to chemical additives and surface chemistry. This is visible when polishing with DI water, hydroperoxide, acidic and basic slurries. Polishing mechanisms is further discussed here with the SEM analysis.
Keywords
chemical mechanical polishing; copper; friction; lubrication; scanning electron microscopy; surface chemistry; CMP; Cu; SEM; boundary lubrication; chemical additives; contact-polishing process; copper chemical-mechanical polishing; elasto-hydrodynamic lubrication; friction coefficient; lubricating behavior; mechanical impact; surface chemistry; Chemical processes; Chemical technology; Copper; Friction; Laboratories; Lubrication; Scanning electron microscopy; Slurries; Surface resistance; Tribology;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.982029
Filename
982029
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