Two-dimensional process simulation of bipolar devices using a multilayer simulator: IMPACT4

Author

Baccus, B. ; Collard, D. ; Dubois, Eric ; Morel, D.

Author_Institution

Inst. Superieur d´´Electron. du Nord, Lille, France

fYear

1988

fDate

12-13 Sep 1988

Firstpage

164

Lastpage

167

Abstract

A new 2D multilayer process simulator specially developed for the study of advanced bipolar technologies is described. Numerical problems are presented and an application is introduced to demonstrate the possibilities of the program. The layer management is performed by the topology simulation module, according to the etching or deposition steps. The well-known string model is used and special algorithmic problems have been solved in order to take into account the general multilayer aspect. The compatibility with mesh generation has been also carefully studied: to avoid accuracy loss in the surface shape definition, the string model points are also the surface vertices of the FEM triangulation

Keywords

VLSI; bipolar integrated circuits; digital simulation; electronic engineering computing; semiconductor device models; 2D multilayer process simulator; FEM triangulation; IMPACT4; VLSI; advanced bipolar technologies; deposition; etching; layer management; mesh generation; numerical problems; program; string model; surface shape definition; topology simulation module; Etching; Implants; Ion implantation; Jacobian matrices; Mesh generation; Nonhomogeneous media; Shape; Silicon; Topology; Vectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1988., Proceedings of the 1988

Conference_Location

Minneapolis, MN

Type

conf

DOI

10.1109/BIPOL.1988.51069

Filename

51069