Growth and annealing temperature dependences of epitaxial ZnO thin films for optoelectronic applications

Author

Shan, F.K. ; Liu, G.X. ; Lee, W.J. ; Shin, B.C.

Author_Institution

DongEui Univ., Busan

Volume

1

fYear

2006

fDate

22-25 Oct. 2006

Firstpage

714

Lastpage

715

Abstract

Epitaxial ZnO thin films were deposited on sapphire (001) substrates at various temperatures by using pulsed laser deposition (PLD) system. An x-ray diffractometer (XRD) was used to investigate the structural properties of the thin films An atomic force microscope (AFM) was used to investigate the surface morphologies of the thin films. The surface roughness and grain size of the thin films increased with increasing growth temperature. A spectrometer was used to investigate the photoluminescent (PL) properties of the thin films. It was found that all the thin films showed two emissions. One was the near band edge (NBE) emission; the other was the broad deep-level (DL) emission.

Keywords

X-ray diffraction; annealing; atomic force microscopy; epitaxial growth; photoluminescence; pulsed laser deposition; sapphire; surface morphology; surface roughness; thin films; zinc compounds; ZnO; ZnO - Interface; annealing temperature dependency; atomic force microscope; epitaxial thin films; grain size; pulsed laser deposition; sapphire (001); surface morphology; surface roughness; thin film growth; x-ray diffractometer; Annealing; Atomic force microscopy; Pulsed laser deposition; Rough surfaces; Sputtering; Surface morphology; Surface roughness; Temperature dependence; Transistors; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE

Conference_Location

Gyeongju

Print_ISBN

978-1-4244-0541-1

Electronic_ISBN

978-1-4244-0541-1

Type

conf

DOI

10.1109/NMDC.2006.4388975

Filename

4388975