DocumentCode
2218107
Title
Degradation model of the electron gate current in PMOSFET
Author
Tang, Yusheng ; Hao, Yue ; Zhu, Jiangang ; Zhang, Jincheng
Author_Institution
Microelectron. Technique Center, Shanghai Jiao Tong Univ., China
Volume
2
fYear
2001
fDate
22-25 Oct. 2001
Firstpage
1014
Abstract
In this paper, we present an accurate degradation model of the electron gate current in PMOSFETs. The analytical and physics-based model was developed considering trapped-electron effect on the gate current during the stress. This model can be used to extract exactly the trapped electron density in the gate oxide of PMOSFET and to model the hot-carrier lifetime of the devices.
Keywords
MOSFET; carrier lifetime; electron density; electron traps; hot carriers; semiconductor device models; PMOSFET; degradation model; electron gate current; gate oxide; hot-carrier lifetime; physics-based model; trapped electron density; trapped-electron effect; Current density; Degradation; Electron traps; Electronic mail; MOSFET circuits; Microelectronics; Packaging; Partial response channels; Stress measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.982068
Filename
982068
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