Chemical structures of AlGaN/AlN/Si [111] by MOCVD using AES and XPS

In this paper X-ray photoelectron spectrum and Auger electron spectrum were used to study the microstructure of AlGaN/AlN/Si [111] grown by metal organic chemical vapor deposition. The results indicated that a broad transition region, composed of AlN, Si₃N₄, SiN_x (x<4/3) and Si was present at the interface of AlN/Si. At the interface of AlGaN/AlN, the main incorporation of N shifted from AlN to the compound of GaN and AlN gradually. The diffusion of Si atoms was very strong at the high growth temperatures and the signal of Si could be found in whole epilayers.