DocumentCode
2220018
Title
Development of RF transistors: a historical prospect
Author
Schwierz, Frank ; Liou, Juin J.
Author_Institution
Fachgebiet Festkorperelektronik, Ilmenau Tech. Univ., Germany
Volume
2
fYear
2001
fDate
22-25 Oct. 2001
Firstpage
1314
Abstract
The development of RF transistors went almost unnoticed until the early 1980s because, unlike Si VLSI, there were no mass consumer markets for such devices. Most applications for RF transistors had been military oriented. Recently, this has been changed drastically due to the explosive growth of the markets for civil wireless communication systems. This paper covers the evolution and current status of transistors used in RF electronic systems. Important background, development and major milestones leading to modern RF transistors are presented. The concept of heterostructure, a feature frequently used in RF transistors, is discussed. The different transistor types and their figures of merit are then addressed. Finally an outlook of expected future developments and applications of RF transistors is given.
Keywords
UHF transistors; microwave transistors; mobile communication; technological forecasting; RF electronics; RF transistors; civil wireless communication systems; figures of merit; future developments; heterostructure; Cellular phones; Consumer electronics; Cutoff frequency; Frequency estimation; Power generation; Power transistors; Radio frequency; Satellite broadcasting; Wireless LAN; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.982143
Filename
982143
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