DocumentCode
2220623
Title
Charge storage characteristics in Ge/Si hetero-nanocrystals based MOS memory structure
Author
Yang, H.G. ; Shi, Y. ; Wu, J. ; Zhao, B. ; Zhao, L.Q. ; Yuan, X.L. ; Gu, S.L. ; Zhang, R. ; Shen, B. ; Han, P. ; Zheng, Y.D.
Author_Institution
Dept. of Phys., Nanjing Univ., China
Volume
2
fYear
2001
fDate
22-25 Oct. 2001
Firstpage
1418
Abstract
The simulation and experimental measurement of the charge storage characteristics in Ge/Si hetero-nanocrystals based MOS memory structure have been performed. Owing to the Ge/Si hetero-energy bands, comparing with Si nanocrystal memory, the retention time increases remarkably. The trade-off between the speed programming and the long retention could be solved efficiently, and the performance of the device is substantially improved.
Keywords
MIS structures; MOS memory circuits; elemental semiconductors; germanium; nanoelectronics; nanostructured materials; semiconductor storage; silicon; Ge-Si; Ge/Si hetero-energy bands; Ge/Si hetero-nanocrystals; MOS memory structure; charge storage characteristics; retention time; speed programming; Charge measurement; Current measurement; Hetero-nanocrystal memory; Logic circuits; Logic programming; Nanocrystals; Solids; Tunneling; Very large scale integration; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.982169
Filename
982169
Link To Document