DocumentCode
2221656
Title
Gain-bandwidth enhancement in GaAs MESFET wideband amplifiers
Author
Abidi, A.A.
Author_Institution
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fYear
1988
fDate
7-9 Jun 1988
Firstpage
1465
Abstract
Most direct-coupled GaAs MESFET amplifiers tend to use a conventional topology, which provides a limited gain-bandwidth product per stage. Circuit techniques to increase the bandwidth in such amplifiers are discussed, considering the examples of a 26-dB, 3.2 GHz amplifier using cascode stages, and an 11-dB, 6.4-GHz amplifier using distributed matching elements. Particular emphasis is placed on bandwidth enhancement using distributed matching elements
Keywords
III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; microwave amplifiers; wideband amplifiers; 11 dB; 26 dB; 3.2 GHz; 6.4 GHz; GaAs; III-V semiconductors; MESFET wideband amplifiers; MMIC; SHF; bandwidth enhancement; cascode stages; direct-coupled type; distributed matching elements; gain-bandwidth product; microwave amplifier; Bandwidth; Broadband amplifiers; Circuit topology; Feedback; Gallium arsenide; Inverters; MESFETs; Optical amplifiers; Optical fiber amplifiers; Wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1988., IEEE International Symposium on
Conference_Location
Espoo
Type
conf
DOI
10.1109/ISCAS.1988.15206
Filename
15206
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