• DocumentCode
    2222349
  • Title

    Nitride gallium high power integrated heterostructure FETS

  • Author

    Rakov, Y.N. ; Monchares, N.V. ; Bobrova, T.P. ; Uzelmann, G.F. ; Mjakishev, Y.B. ; Bondareva, T.K. ; Sveshnikov, Y.N.

  • Author_Institution
    Joint Stock Co. ≪Oktava≫, Novosibirsk, Russia
  • fYear
    2011
  • fDate
    12-16 Sept. 2011
  • Firstpage
    151
  • Lastpage
    152
  • Abstract
    The heterostructures AlGaN/AlN/GaN, grown on the sapphire substrates, the design of the integrated power HFET and its technology have been developed. HFETs have given the output power 7.57 W/mm, power efficiency (PE = 43.5 %) and power gain 5.6 dB at the frequency of 12 GHz.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; power HEMT; wide band gap semiconductors; Al2O3; AlGaN-AlN-GaN; efficiency 43.5 percent; frequency 12 GHz; gain 5.6 dB; integrated power HFET; nitride gallium high power integrated heterostructure; sapphire substrates; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MODFETs; Power amplifiers; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4577-0883-1
  • Type

    conf

  • Filename
    6068876
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2222349