Growth and Characterization of InAs/GaAs Quantum Dots and Diode Lasers

Author

Sears, Kallista ; Tan, Hark Hoe ; Buda, Manuela ; Wong-Leung, Jenny ; Jagadish, Chennupati

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT

fYear

2006

fDate

3-7 July 2006

Abstract

This paper discusses the self-assembled growth of InAs/GaAs quantum dots by metal organic chemical vapor deposition and the lasing characteristics of diode lasers incorporating either 3 or 5 stacked quantum dot layers. Lasing occurred from the quantum dot excited state when 3-stacked layers were used. However by incorporating 5 stacked layers of quantum dots into a device, the increased gain volume enabled lasing from the ground state for cavity lengths as short as 1.5 mm.

Keywords

MOCVD coatings; electroluminescence; excited states; self-assembly; semiconductor lasers; semiconductor quantum dots; InAs-GaAs; MOCVD; diode lasers; ground state; lasing characteristics; metal organic chemical vapor deposition; quantum dots; self-assembled growth; stacked quantum dot layers; Atomic force microscopy; Chemical lasers; Diode lasers; Gallium arsenide; Laser modes; MOCVD; Pulsed laser deposition; Quantum dot lasers; Temperature sensors; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoscience and Nanotechnology, 2006. ICONN '06. International Conference on

Conference_Location

Brisbane, Qld.

Print_ISBN

1-4244-0452-5

Electronic_ISBN

1-4244-0452-5

Type

conf

DOI

10.1109/ICONN.2006.340664

Filename

4143444