DocumentCode
2224514
Title
Photon emitting diode using semiconductor quantum dot
Author
Zhiliang Yuang ; Kardynal, B.E. ; Stevenson, R.M. ; Ward, M.B. ; Shields, A.J. ; Lobo ; Cooper, Ken ; Ritchie, D.A. ; Pepper, Matthew
Author_Institution
Toshiba Res. Eur. Ltd., Cambridge, UK
fYear
2002
fDate
19-24 May 2002
Firstpage
96
Abstract
Summary form only given. We report the realization of an electrically-driven single photon source based upon integrating InAs quantum dots into a conventional semiconductor light emitting diode structure. Our results suggest that semiconductor technology can be used to mass-produce a cheap and convenient single photon source for applications.
Keywords
indium compounds; integrated optics; light emitting diodes; molecular beam epitaxial growth; semiconductor quantum dots; GaAs; InAs; InAs quantum dots; electrically-driven single photon source; molecular beam epitaxy; p-i-n diode; quantum information technology; semiconductor light emitting diode structure; semiconductor technology; single photon source; Epitaxial growth; Indium compounds; Integrated optics; Light-emitting diodes; Quantum dots;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Long Beach, CA, USA
Print_ISBN
1-55752-708-3
Type
conf
DOI
10.1109/QELS.2002.1031153
Filename
1031153
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