Femtosecond Si-K/spl alpha/ pulses from laser produced plasmas

Summary form only given. We report on the measurement of the temporal profile of the Si-K/spl alpha/ line emission from a femtosecond laser produced plasma. The measurement is performed by cross correlating the Si-K/spl alpha/ pulse with the ultrafast response of a laser pumped MBE-grown thin CdTe crystal layer. The pump laser induces an ultrafast change of the CdTe crystal structure and causes a rapid decrease of the x-ray reflectivity. In contrast to InSb bulk measurements, the x-ray penetration depth in this measurement is definitely limited by the thickness of the crystalline layer.