X-band T/R module in state-of-the-art GaN technology

Author

Bettidi, A. ; Cetronio, A. ; Cicolani, M. ; Costrini, C. ; Lanzieri, C. ; Maccaroni, S. ; Marescialli, L. ; Peroni, M. ; Romanini, P.

Author_Institution

SELEX Sist. Integrati S.p.A., Rome, Italy

fYear

2009

fDate

Sept. 30 2009-Oct. 2 2009

Firstpage

258

Lastpage

261

Abstract

In this paper a first iteration X-band T/R module based on a GaN-HEMT MMIC Front-End chip-set, comprising a power amplifier, robust low-noise amplifier and power switch will be presented. Even though ultimate T/R module performance cannot be achieved with current GaN-HEMT technological maturity the impact that this technology can have at systems level in terms of performance/cost trade-off will be illustrated by means of a preliminary innovative module architecture which foresees the elimination of more traditional T/R module components such as ferrite circulator and limiter for front-end signal routing and protection.

Keywords

MMIC; gallium compounds; high electron mobility transistors; power amplifiers; switches; GaN technology; GaN-HEMT MMIC front-end chip-set; X-band T/R module; front-end signal routing; power amplifier; power switch; robust low-noise amplifier; Application specific integrated circuits; Costs; Gallium nitride; HEMTs; Integrated circuit technology; Low-noise amplifiers; MMICs; Microwave technology; Protection; Radar;

fLanguage

English

Publisher

ieee

Conference_Titel

Radar Conference, 2009. EuRAD 2009. European

Conference_Location

Rome

Print_ISBN

978-1-4244-4747-3

Type

conf

Filename

5307144