• DocumentCode
    2226368
  • Title

    60 GHz GaAs MMIC technology for a high data rate mobile broadband demonstrator

  • Author

    Guttich, U. ; Plattner, A. ; Schwab, W. ; Telliez, I. ; Tranchant, S. ; Savary, P. ; Bourne-Yaonaba, P. ; Byzery, B. ; Delhaye, E. ; Cordier, C. ; Chelouche, M.

  • Author_Institution
    Daimler-Benz AG, Ulm, Germany
  • Volume
    2
  • fYear
    1996
  • fDate
    17-21 June 1996
  • Firstpage
    495
  • Abstract
    A millimeter-wave front end demonstrator for broadband pico-cell networks has been developed using 60 GHz GaAs MMIC technology. The following sub-assemblies are integrated in the demonstrator: a 56.8 GHz phase locked LO, an upconverter from 5.2-6.2 GHz IF to a 62-63 GHz band, a double-channel low noise downconverter from the 62-63 GHz band to an IF of 5.2-6.2 GHz, and a power amplifier for the 62 GHz to 66 GHz band. For a duplex operation a second upconverter module operating at 65-66 GHz (IF 8.2-9.2 GHz) is used. All monolithic HFET and PHFET circuits are realised using subquarter micron technologies. For the fully assembled receivers overall noise figures of less than 10 dB have been measured. Field tests have proven the ability to transmit data nearly error free over a distance of 200 m.
  • Keywords
    III-V semiconductors; VLSI; broadband networks; digital radio; field effect MIMIC; gallium arsenide; millimetre wave amplifiers; millimetre wave frequency convertors; millimetre wave oscillators; mobile radio; phase locked oscillators; power amplifiers; radio networks; 200 m; 60 GHz; GaAs; HFET circuits; MMIC technology; PHFET circuits; broadband pico-cell networks; data rate; double-channel low noise downconverter; duplex operation; millimeter-wave front end demonstrator; mobile broadband demonstrator; overall noise figures; phase locked LO; power amplifier; subquarter micron technologies; upconverter; Assembly; Circuits; Gallium arsenide; HEMTs; Low-noise amplifiers; MMICs; MODFETs; Millimeter wave technology; Noise figure; Phase noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1996., IEEE MTT-S International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-3246-6
  • Type

    conf

  • DOI
    10.1109/MWSYM.1996.510981
  • Filename
    510981