Mobility enhancement in (110)-oriented ultra-thin-body single-gate and double-gate SOI MOSFETs

Author

Hiramoto, Toshiro ; Tsutsui, Gen ; Saitoh, Masumi ; Nagumo, Toshiharu ; Saraya, Takuya

Author_Institution

Inst. of Ind. Sci., Univ. of Tokyo, Tokyo

fYear

2006

fDate

Jan. 30 2006-Feb. 1 2006

Firstpage

44

Lastpage

55

Abstract

Mobility enhancement of both electron and hole is experimentally demonstrated in (110) ultra-thin-body SOI MOSFETs. Single-gate operation and double-gate operation are also compared. Hole mobility enhancement in the single-gate operation is achieved by the suppression of phonon scattering, while electron mobility enhancement in double-gate operation is achieved by volume inversion. Based on the experimental results, the best device structure for highest CMOS circuit performance in future has been discussed.

Keywords

CMOS integrated circuits; MOSFET; electron mobility; hole mobility; silicon-on-insulator; CMOS circuit; double-gate operation; electron mobility enhancement; hole mobility enhancement; phonon scattering suppression; single-gate operation; ultra-thin-body SOI MOSFET; volume inversion; Charge carrier processes; Degradation; Electric variables measurement; Electrical resistance measurement; Electron mobility; Electronic mail; MOS devices; MOSFETs; Particle scattering; Phonons; phonon scattering; quantum confinement; surface roughness scattering; volume inversion;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano CMOS, 2006 International Workshop on

Conference_Location

Mishima

Print_ISBN

978-1-4244-0603-6

Type

conf

DOI

10.1109/IWNC.2006.4570977

Filename

4570977