Ultrafast carrier activation in resonantly excited 1.3 /spl mu/m InAs/GaAs quantum dots at room temperature

Author

Quochi, E. ; Dinu, M. ; Shah, J. ; Pfeiffer, L.N. ; West, K.W. ; Platzman, P.M.

Author_Institution

Lucent Technol. Bell Labs, Holmdel, NJ, USA

fYear

2002

fDate

19-24 May 2002

Firstpage

179

Lastpage

180

Abstract

Summary form only given. Due to the three-dimensional confinement of electronic states in semiconductor quantum dots (QDs), LO phonon scattering is expected to be influenced strongly by the shape of the dots, the energy separation between the QD electronic states, and by the nature and symmetry of the phonon modes. In this paper we demonstrate extremely large electron-hole carrier activation rates from the ground state to the first excited state of high-symmetry InAs QDs resonantly excited at room temperature.

Keywords

III-V semiconductors; electron-hole recombination; electron-phonon interactions; gallium arsenide; indium compounds; phonon-exciton interactions; phonon-phonon interactions; photoluminescence; semiconductor quantum dots; time resolved spectra; 1.3 micron; InAs-GaAs; LO phonon scattering; exciton-LO phonon interaction; first excited; fractional dot occupation; ground state; large electron-hole activation rates; phonon bottleneck; quadratic dependence; resonantly excited quantum dots; room temperature; time-resolved upconversion PL; ultrafast carrier activation; Charge carrier lifetime; Electrons; Excitons; Gallium compounds; Indium compounds; Phonons; Photoluminescence; Quantum dots;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-708-3

Type

conf

DOI

10.1109/QELS.2002.1031279

Filename

1031279